Numerical Simulation of IGBTs at Elevated Temperatures
نویسندگان
چکیده
In this paper we present a 2D finite difference device simulator which has been developed to underpin the design and optimisation of power IGBTs. The simulator has been used to investigate the effect of elevated temperatures on the performance of the IGBT for use in environments where ambient temperatures up to 200°C are likely. The preliminary results of this investigation are reported here.
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